Datasheet > 15N120NDA

15N120NDA

更新时间： 2022-05-07 09:30:52

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15N120NDA 数据手册

SEMICONDUCTOR

KGH15N120NDA

TECHNICAL DATA

General Description

KEC NPT IGBTs offer lowest losses and highest energy efficiency for

application such as IH (induction heating), UPS, General inverter and other

soft switching applications.

MILLIMETERS

DIM

15.60 0.20

4.80 0.20

19.90 0.20

2.00 0.20

FEATURES

1.00 0.20

High speed switching

3.00 0.20

3.80 0.20

Higher system efficiency

Soft current turn-off waveforms

Square RBSOA using NPT technology

3.50 + 0.20

13.90 0.20

12.76 0.20

23.40 + 0.20

1.5+0.15-0.05

16.50 + 0.30

1.40 0.20

13.60 + 0.20

9.60 0.20

5.45 0.30

3.20 0.10

18.70 0.20

0.60+0.15-0.05

1. GATE

2. COLLECTOR

3. EMITTER

TO-3P(N)-E

MAXIMUM RATING (Ta=25

)

CHARACTERISTIC

Collector-Emitter Voltage

Gate-Emitter Voltage

SYMBOL RATING UNIT

V_CES

V_GES

1200

@T_C=25

I_C

Collector Current

@T_C=100

I_CM

I_F

I_FM

Pulsed Collector Current

Diode Continuous Forward Current

Diode Maximum Forward Current

@T_C=100

200

@T_C=25

P_D

Maximum Power Dissipation

@T_C=100

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55 to + 150

*Repetitive rating : Pulse width limited by max. junction temperature

THERMAL CHARACTERISTIC

CHARACTERISTIC

SYMBOL

MAX.

0.6

UNIT

Thermal Resistance, Junction to Case (IGBT)

Thermal Resistance, Junction to Case (DIODE)

2.8

2008. 6. 30

Revision No : 0

1/6

12 3 4 5 6

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