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15MQ040N PDF预览

15MQ040N

更新时间: 2024-11-18 12:50:47
品牌 Logo 应用领域
台芯 - TAYCHIPST 二极管光电二极管瞄准线功效
页数 文件大小 规格书
2页 1775K
描述
SCHOTTKY RECTIFIER

15MQ040N 数据手册

 浏览型号15MQ040N的Datasheet PDF文件第2页 
15MQ040N  
40V  
3.0A  
SCHOTTKY RECTIFIER  
FEATURES  
Switching power supplies  
Meter protection  
Reverse protection for power input to PC board circuits  
Battery isolation and charging  
Low threshold voltage diode  
Free-wheeling or by-pass diode  
Low voltage clamp  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings  
Parameters  
15MQ Units  
Conditions  
IF(AV) Max. Average Forward Current  
*SeeFig. 4  
2.1  
A
50%dutycycle@TL = 105°C, rectangularwaveform.  
OnPCboard9mm2 island(.013mmthickcopperpad area)  
Following any rated  
load condition and  
IFSM Max. Peak One Cycle Non-Repetitive  
SurgeCurrent *SeeFig. 6  
330  
140  
6.0  
5µs Sineor3µsRect. pulse  
A
10ms Sine or 6ms Rect. pulse with rated VRRM applied  
EAS Non-Repetitive Avalanche Energy  
mJ TJ =25°C,IAS =1A,L=12mH  
A
IAR  
Repetitive Avalanche Current  
1.0  
Electrical Specifications  
Parameters  
15MQ Units  
Conditions  
VFM Max. Forward Voltage Drop  
* See Fig. 1  
(1)  
0.42  
0.49  
0.34  
0.43  
0.5  
V
V
V
V
@ 1A  
@ 2A  
@ 1A  
@ 2A  
TJ = 25 °C  
TJ = 125 °C  
IRM Max. Reverse Leakage Current (1)  
* See Fig. 2  
mA TJ = 25 °C  
mA TJ = 125 °C  
VR = rated VR  
20  
VF(TO) Threshold Voltage  
0.26  
64.6  
134  
V
TJ = TJ max.  
rt  
Forward Slope Resistance  
Typical Junction Capacitance  
Typical Series Inductance  
m  
pF  
CT  
LS  
VR = 10VDC, TJ = 25°C, test signal = 1Mhz  
2.0  
nH Measured lead to lead 5mm from package body  
V/µs (Rated VR)  
dv/dt Max. Voltage Rate of Change  
(1) Pulse Width < 300µs, Duty Cycle < 2%  
10000  
Thermal-Mechanical Specifications  
Parameters  
15MQ Units  
Conditions  
TJ  
Max. JunctionTemperatureRange (*) -40 to 150 °C  
Tstg Max. Storage Temperature Range  
-40 to 150 °C  
RthJA Max. Thermal Resistance Junction  
to Ambient  
80  
°C/W DC operation  
wt  
Approximate Weight  
Case Style  
Device Marking  
0.07(0.002) g (oz.)  
SMA  
IR3F  
Similar D-64  
(*) dPtot  
dTj  
1
<
thermal runaway condition for a diode on its own heatsink  
Rth(j-a)  
E-mail: sales@taychipst.com  
1 of 2  
Web Site: www.taychipst.com  

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