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15GN01MA

更新时间： 2024-02-01 05:45:56
品牌 Logo 应用领域
三洋 - SANYO 开关放大器
页数 文件大小 规格书
5页 49K
描述
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications

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15GN01MA 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.72Is Samacsys：N
最大集电极电流 (IC)：0.05 A集电极-发射极最大电压：8 V
配置：SINGLE最小直流电流增益 (hFE)：200
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最大功率耗散 (Abs)：0.1 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：1500 MHz
Base Number Matches：1

15GN01MA 数据手册

 浏览型号15GN01MA的Datasheet PDF文件第2页浏览型号15GN01MA的Datasheet PDF文件第3页浏览型号15GN01MA的Datasheet PDF文件第4页浏览型号15GN01MA的Datasheet PDF文件第5页 
Ordering number : ENA1100  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
VHF to UHF Band High-Frequency Switching,  
High-Frequency General-Purpose Amplifier Applications  
15GN01MA  
Features  
•
Small ON-resistance [Ron=2Ω (I =3mA)].  
B
•
Small output capacitance [Cob=1.1pF (V =10V)].  
CB  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
15  
8
CBO  
CEO  
EBO  
V
3
V
I
50  
400  
150  
mA  
mW  
°C  
°C  
C
Collector Dissipation  
P
When mounted on ceramic substrate (250mm2✕0.8mm)  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
0.5  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
I
V
V
V
V
V
=10V, I =0A  
μA  
μA  
CBO  
CB  
EB  
CE  
CE  
CB  
E
=2V, I =0A  
0.5  
EBO  
C
h
=5V, I =10mA  
200  
1.0  
400  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
f
=5V, I =10mA  
C
1.5  
1.1  
GHz  
pF  
V
T
Cob  
=10V, f=1MHz  
1.5  
Collector-to-Emitter Saturation Voltage  
Output ON resistance  
Marking : ZA  
V
(sat)  
I
=20mA, I =2mA  
0.06  
2.0  
0.12  
CE  
Ron  
C
B
I =3mA, f=10kHz  
Ω
B
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
93009AB TK IM TC-00002115  
No. A1100-1/5  
12345

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