是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-93 |
包装说明: | POST/STUD MOUNT, O-MUPM-H3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.15 |
标称电路换相断开时间: | 100 µs | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 200 V/us | 最大直流栅极触发电流: | 150 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 200 mA |
JEDEC-95代码: | TO-209AB | JESD-30 代码: | O-MUPM-H3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
最低工作温度: | -65 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大均方根通态电流: | 235 A | 重复峰值关态漏电流最大值: | 15000 µA |
断态重复峰值电压: | 200 V | 重复峰值反向电压: | 200 V |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTE5580 | NTE |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
15102GOAE3 | MICROSEMI |
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Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-209AB, | |
15102GOAIL | MICROSEMI |
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Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN | |
15102GOAILE3 | MICROSEMI |
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Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN | |
15102GOB | MICROSEMI |
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Silicon Controlled Rectifier, 235.5A I(T)RMS, 200V V(RRM), 1 Element, TO-93 | |
15102GOD | MICROSEMI |
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Silicon Controlled Rectifier, 235A I(T)RMS, 200V V(RRM), 1 Element | |
15102GODE3 | MICROSEMI |
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15102P | WINBOND |
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SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CA | |
15102PI | WINBOND |
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SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CA | |
15102S | WINBOND |
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SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CA | |
15102SI | WINBOND |
获取价格 |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CA |