生命周期: | Active | 包装说明: | POST/STUD MOUNT, O-MUPM-D2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.69 |
Is Samacsys: | N | 配置: | SINGLE |
最大直流栅极触发电流: | 150 mA | JESD-30 代码: | O-MUPM-D2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 125 °C | 最低工作温度: | -65 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 最大均方根通态电流: | 235 A |
重复峰值反向电压: | 600 V | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
150C60BIL | MICROSEMI | 暂无描述 |
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150C60BILE3 | MICROSEMI | Silicon Controlled Rectifier, 235A I(T)RMS, 600V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN |
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150C80B | MICROSEMI | Silicon Controlled Rectifier |
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150C80BE3 | MICROSEMI | Silicon Controlled Rectifier, 235A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, |
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150C80BF | MICROSEMI | Silicon Controlled Rectifier |
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150C80BFE3 | MICROSEMI | Silicon Controlled Rectifier, 235A I(T)RMS, 800V V(RRM), 1 Element |
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