生命周期: | Contact Manufacturer | Reach Compliance Code: | unknown |
风险等级: | 5.74 | Is Samacsys: | N |
特性阻抗: | 50 Ω | 构造: | COMPONENT |
最大输入功率 (CW): | 23.01 dBm | 最大插入损耗: | 0.9 dB |
最大工作频率: | 950 MHz | 最小工作频率: | 450 MHz |
最高工作温度: | 105 °C | 最低工作温度: | -55 °C |
射频/微波设备类型: | SPDT | 最大电压驻波比: | 1.4 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
150C60B | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier | |
150C60BE3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 235A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-209AB, | |
150C60BF | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier | |
150C60BFIL | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 235A I(T)RMS, 600V V(RRM), 1 Element | |
150C60BFILE3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 235A I(T)RMS, 600V V(RRM), 1 Element | |
150C60BIL | MICROSEMI |
获取价格 |
暂无描述 | |
150C60BILE3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 235A I(T)RMS, 600V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN | |
150C80B | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier | |
150C80BE3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 235A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, | |
150C80BF | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier |