Datasheet > 13PD150-ST

13PD150-ST

更新时间： 2024-09-23 22:08:59

品牌	Logo	应用领域
ANADIGICS		光电二极管光电二极管
页数	文件大小	规格书
1页	82K
描述
High Performance InGaAs p-i-n Photodiode

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中文翻译

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技术参数
数据手册

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13PD150-ST 技术参数

生命周期：	Transferred	包装说明：	HERMETIC SEALED, TO-46, 2 PIN
Reach Compliance Code：	unknown	HTS代码：	8541.40.60.50
风险等级：	5.58	Is Samacsys：	N
配置：	SINGLE	最大暗电源：	2.5 nA
功能数量：	1	最高工作温度：	85 °C
最低工作温度：	-40 °C	光电设备类型：	PIN PHOTODIODE
最小反向击穿电压：	20 V	形状：	ROUND
尺寸：	0.15 mm	Base Number Matches：	1

13PD150-ST 数据手册

High Performance InGaAs p-i-n Photodiode

‘ST’ Active Device Mount

13PD150-ST

The 13PD150-ST, an InGaAs photodiode with a 150mm-diameter photosensitive region

packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for

high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar

semiconductor design and dielectric passivation provide low noise performance. Reliability is

assured by hermetic sealing and a 100% purge burn-in ( 200^oC, 15 hours, V_r= 20V ). The ST

receptacle is suitable for bulkhead and PC board mounting.

Features

Planar Structure

Dielectric Passivation

100% Purge Burn-In

High Responsivity

Device Characteristics:

Parameters

Operating Voltage

Dark Current

Capacitance

Responsivity

Rise/Fall

Test Conditions

Min Typ Max

Units

-5V

1300nm

-20

Volts

0.5

1.5

2.5

2.25

0.7

0.8

0.5

A/W

Absolute Maximum Ratings

Reverse Voltage

20 Volts

Forward Current

Reverse Current

5 mA

1 mA

Operating Temperature

Storage Temperature

Soldering Temperature

-40^oC to + 85^oC

250^oC

829 Flynn Road, Camarillo, CA 93012

tel(805)445-4500 fax(805)445-4502

中文翻译

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