Datasheet > 13003U

13003U

更新时间： 2023-12-06 20:02:12

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
2页	154K
描述
小信号晶体管

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数据手册

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13003U 数据手册

13003U

NPN Silicon Epitaxial Planar Transistor

for high voltage and high speed switching applications

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

800

430

Collector Current (DC)

1.5

Collector Current (Pulse)

Total Power Dissipation

Junction Temperature

I_CP

P_tot

0.8

T_j

150

Storage Temperature Range

T_stg

- 65 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

h_FE

at V_CE= 2 V, I_C= 0.5 A

at V_CE= 2 V, I_C= 1 A

at V_CE= 5 V, I_C= 10 µA

Collector Base Cutoff Current

at V_CB= 700 V

Emitter Base Cutoff Current

at V_EB= 9 V

Collector Base Breakdown Voltage

at I_C= 500 µA

Collector Emitter Breakdown Voltage

at I_C= 5 mA

I_CBO

µA

I_EBO

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

800

430

Emitter Base Breakdown Voltage

at I_E= 500 µA

Collector Emitter Saturation Voltage

at I_C= 0.5 A, I_B= 0.1 A

at I_C= 1 A, I_B= 0.25 A

at I_C= 1.5 A, I_B= 0.5 A

Base Emitter Saturation Voltage

at I_C= 0.5 A, I_B= 0.1 A

0.5

V_CE(sat)

1.2

V_BE(sat)

at I_C= 1 A, I_B= 0.25 A

Transition Frequency

at V_CE= 10 V, I_C= 100 mA

Turn On Time

at V_CC= 125 V, I_C= 1 A, I_B= -I_B2= 0.2 A, R_L= 125 Ω

Storage Time

at V_CC= 125 V, I_C= 1 A, I_B= -I_B2= 0.2 A, R_L= 125 Ω

f_T

t_on

t_s

MHz

µs

1.1

µs

Fall Time

t_f

0.7

µs

at V_CC= 125 V, I_C= 1 A, I_B= -I_B2= 0.2 A, R_L= 125 Ω

Dated：26/08/2015 Rev：01

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