5秒后页面跳转
13003BR PDF预览

13003BR

更新时间: 2024-11-28 21:54:15
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
3页 41K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

13003BR 数据手册

 浏览型号13003BR的Datasheet PDF文件第2页浏览型号13003BR的Datasheet PDF文件第3页 
Spec. No. : HT200210  
Issued Date : 2001.01.01  
Revised Date : 2002.05.08  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HMJE13003  
NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
High Voltage, High Speed Power Switch  
Switch Regulators  
PWM Inverters and Motor Controls  
Solenoid and Relay Drivers  
Deflection Circuits  
TO-126  
Absolute Maximum Ratings (Ta=25°C)  
Maximum Temperatures  
Storage Temperature............................................................................................ -50 ~ +150 °C  
Junction Temperature...................................................................................... 150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W  
Maximum Voltages and Currents (Ta=25°C)  
VCEX Collector to Emitter Voltage .................................................................................... 700 V  
VCEO Collector to Emitter Voltage.................................................................................... 400 V  
VEBO Emitter to Base Voltage.............................................................................................. 9 V  
IC Collector Current ........................................................................................ Continuous 1.5 A  
IB Base Current............................................................................................. Continuous 0.75 A  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCEX  
BVCEO  
IEBO  
700  
400  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
500  
1
3
1
1.2  
40  
25  
V
V
mA  
mA  
mV  
V
V
V
V
IC=1mA, VBE(off)=1.5V  
IC=10mA  
VEB=9V  
ICEX  
VCE=700V, VBE(off)=1.5V  
IC=0.5A, IB=0.1A  
IC=1A, IB=0.25A  
IC=1.5A, IB=0.5A  
IC=0.5A, IB=0.1A  
IC=1A, IB=0.25A  
IC=0.5A, VCE=2V  
IC=1A, VCE=2V  
*VCE(sat)1  
*VCE(sat)2  
*VCE(sat)3  
*VBE(sat)  
*VBE(sat)  
*hFE1  
8
5
*hFE2  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HMJE13003  
HSMC Product Specification  

与13003BR相关器件

型号 品牌 获取价格 描述 数据表
13003BS UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION
13003BS_15 UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
13003BSG-T60-F-K UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
13003BSG-T60-K UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION
13003BSG-T92-B UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION
13003BSG-T92-F-B UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
13003BSG-T92-F-K UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
13003BSG-T92-K UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION
13003BSG-T92-R UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
13003BSG-TM3-T UTC

获取价格

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION