Datasheet > 13002A

13002A

更新时间： 2024-11-20 14:53:15

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
1页	20K
描述
小信号晶体管

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13002A 数据手册

13002A

NPN Silicon Epitaxial Planar Transistor

High voltage power transistor

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

700

Collector Emitter Voltage

Emitter Base Voltage

400

0.3

Collector Current

Collector Current (Pulse)

Total Power Dissipation

Operating Junction Temperature

Storage Temperature Range

I_CP

0.5

P_tot

0.6

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

h_FE

at V_CE= 10 V, I_C= 10 µA

at V_CE= 10 V, I_C= 100 mA

at V_CE= 10 V, I_C= 280 mA

Collector Base Cutoff Current

at V_CB= 700 V

I_CBO

µA

Emitter Base Cutoff Current

at V_EB= 7 V

I_EBO

Collector Base Breakdown Voltage

at I_C= 10 mA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

700

400

Collector Emitter Breakdown Voltage

at I_C= 1 mA

Emitter Base Breakdown Voltage

at I_E= 1 mA

Collector Emitter Saturation Voltage

at I_C= 100 mA, I_B= 10 mA

at I_C= 200 mA, I_B= 20 mA

V_CEsat

1.5

Transition Frequency

at V_CE= 10 V, I_C= 100 mA

f_T

MHz

Dated: 22/08/2016 Rev: 01

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