Datasheet > 12MBI75VN-120-50

12MBI75VN-120-50

更新时间： 2024-10-15 17:01:07

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
11页	1125K
描述
M1203

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中文翻译

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数据手册

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12MBI75VN-120-50 数据手册

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

12MBI75VN-120-50

IGBT MODULE (V series)

1200V / 75A / IGBT, RB-IGBT 12 in one package

Features

Higher Efﬁciency

Optimized A (T-type) -3 level circuit

Low inductance module structure

Featuring Reverse Blocking IGBT (RB-IGBT)

Applications

Inverter for Motor Drive

Uninterruptible Power Supply

Power conditioner

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Items

Collector-Emitter voltage

Symbols

Conditions

Maximum ratings

Units

CES

1200

±20

Gate-Emitter voltage

VGES

Continuous

1ms

=80°C

IGBT

FWD

Icp

150

Collector current

-I

-I^{C pulse}

1ms

150

Collector power dissipation

Collector-Emitter voltage

Repetitive peak reverse voltage

Gate-Emitter voltage

1 device

320

CES

RRM

GES

600

±20

Continuous

1ms

=80°C

Collector current

150

Collector power dissipation

Junction temperature

Case temperature

1 device

305

150

125

°C

Storage temperature

stg

-40 ~ +125

between terminal and copper base (*1)

between thermistor and others (*2)

iso

AC : 1min.

2500

3.5

VAC

N m

Isolation voltage

Mounting (*3)

Note *1:All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable value : 2.5-3.5 Nm (M5)

8149

NOVEMBER 2013

12 3 4 5 6 7...11

中文翻译

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