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1225 PDF预览

1225

更新时间: 2022-11-24 21:41:48
品牌 Logo 应用领域
达拉斯 - DALLAS 静态存储器
页数 文件大小 规格书
10页 149K
描述
64k Nonvolatile SRAM

1225 数据手册

 浏览型号1225的Datasheet PDF文件第2页浏览型号1225的Datasheet PDF文件第3页浏览型号1225的Datasheet PDF文件第4页浏览型号1225的Datasheet PDF文件第5页浏览型号1225的Datasheet PDF文件第6页浏览型号1225的Datasheet PDF文件第7页 
DS1225AB/AD  
64k Nonvolatile SRAM  
www.dalsemi.com  
FEATURES  
PIN ASSIGNMENT  
10 years minimum data retention in the  
absence of external power  
VCC  
WE  
NC  
A8  
A9  
NC  
A12  
A7  
1
28  
27  
2
3
4
Data is automatically protected during power  
loss  
Directly replaces 8k x 8 volatile static RAM  
or EEPROM  
Unlimited write cycles  
Low-power CMOS  
26  
25  
A6  
A5  
A4  
5
6
24  
23  
A11  
OE  
A10  
CE  
A3  
A2  
7
8
22  
21  
A1  
A0  
9
10  
20  
19  
DQ7  
DQ6  
JEDEC standard 28-pin DIP package  
Read and write access times as fast as 70 ns  
Lithium energy source is electrically  
disconnected to retain freshness until power  
is applied for the first time  
Full ±10% VCC operating range (DS1225AD)  
Optional ±5% VCC operating range  
(DS1225AB)  
DQ0  
11  
12  
18  
17  
DQ1  
DQ2  
GND  
DQ5  
DQ4  
DQ3  
13  
14  
16  
15  
28-Pin ENCAPSULATED PACKAGE  
720-mil EXTENDED  
PIN DESCRIPTION  
A0-A12  
DQ0-DQ7  
Optional industrial temperature range of  
-40°C to +85°C, designated IND  
- Address Inputs  
- Data In/Data Out  
CE  
- Chip Enable  
- Write Enable  
WE  
OE  
- Output Enable  
- Power (+5V)  
- Ground  
VCC  
GND  
NC  
- No Connect  
DESCRIPTION  
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words  
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which  
constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium  
energy source is automatically switched on and write protection is unconditionally enabled to prevent  
data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to  
the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and  
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the  
number of write cycles that can be executed and no additional support circuitry is required for  
microprocessor interfacing.  
1 of 10  
111899  

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