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1214-220M PDF预览

1214-220M

更新时间: 2024-02-21 19:29:53
品牌 Logo 应用领域
ADPOW 晶体射频双极晶体管开关雷达局域网
页数 文件大小 规格书
4页 77K
描述
220 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz

1214-220M 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.62
Is Samacsys:NBase Number Matches:1

1214-220M 数据手册

 浏览型号1214-220M的Datasheet PDF文件第2页浏览型号1214-220M的Datasheet PDF文件第3页浏览型号1214-220M的Datasheet PDF文件第4页 
1214-220M, R2  
1214 – 220M  
220 Watts - 40 Volts, 150ms, 10%  
Radar 1200 - 1400 MHz  
Final Proof  
GENERAL DESCRIPTION  
CASE OUTLINE  
The 1214-220M is an internally matched, COMMON BASE transistor capable  
of providing 220 Watts of pulsed RF output power at one hundred fifty  
microseconds pulse width, ten percent duty factor across the band 1200 to 1400  
MHz. This hermetically solder-sealed transistor is specifically designed for  
L-Band radar applications. It utilizes gold metallization and diffused emitter  
ballasting to provide high reliability and supreme ruggedness.  
55ST, STYLE 1  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC  
700 Watts  
Maximum Voltage and Current  
BVces  
Iebo  
Ic  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
70 Volts  
5 mA  
20 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 200oC  
+ 200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz  
Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz  
Pout  
Pg  
Power Out ( Note 1)  
Power Gain  
Collector Efficiency  
Input Return loss  
Load Mismatch Tolerance  
220  
7.4  
45  
290  
Watts  
dB  
%
Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz  
Vcc=40V, Pin=40W, f = 1.2, 1.3, 1.4 GHz  
Vcc=40V, Pin=40W, f = 1.2 GHz  
50  
hc  
dB  
Rl  
9
VSWR1  
3:1  
2:1  
Vcc=40V, Pin=40W, f = 1.2 GHz  
Load Mismatch - Stability  
VSWRs  
Note 1: Pulse condition of 150msec, 10%.  
BVces  
Ices  
Iebo  
Hfe  
qjc1  
Collector to Emitter Breakdown  
Ic = 100 mA  
Vce = 40 Volts  
Veb = 3 Volts  
Vce = 5 V, Ic = 1 A  
Rated Pulse Condition  
70  
Volts  
mA  
mA  
Collector to Emitter Leakage  
Emitter to Base Breakdown  
DC Current Gain  
10  
5
10  
45  
Thermal Resistance  
0.25  
oC/W  
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE  
CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY  
DIRECT.  
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324  

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