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1214-110M PDF预览

1214-110M

更新时间: 2024-09-27 05:56:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 雷达
页数 文件大小 规格书
4页 106K
描述
110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz

1214-110M 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.8
外壳连接:BASE最大集电极电流 (IC):8 A
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-CDFM-F2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):270 W认证状态:Not Qualified
子类别:BIP RF Small Signal表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

1214-110M 数据手册

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1214-110M  
110 Watts - 50 Volts, 330µs, 10%  
Radar 1200 - 1400 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55KT, STYLE 1  
The 1214-110M is an internally matched, COMMON BASE transistor capable  
of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10%  
duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed  
transistor is specifically designed for L-Band radar applications. It utilizes gold  
metallization and diffused emitter ballasting to provide high reliability and  
supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC  
270 Watts  
Maximum Voltage and Current  
BVces  
BVebo  
Ic  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
75 Volts  
3.0 Volts  
8 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 200oC  
+ 200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
CHARACTERISTICS  
MIN  
TYP  
MAX UNITS  
SYMBOL  
TEST CONDITIONS  
Pout  
Pg  
ηc  
Power Out  
Power Gain  
Collector Efficiency  
Input Return loss  
Droop  
Freq = 1200 – 1400 MHz  
Vcc = 50 Volts  
110  
7.4  
50  
170  
Watts  
dB  
%
dB  
dB  
55  
Pin = 20 Watts  
Rl  
10  
Pulse Width = 330µs  
Duty Factor = 10%  
Droop  
Flatness  
VSWR1  
0.5  
1.25  
3:1  
Flatness  
dB  
Load Mismatch Tolerance  
Load Mismatch - Stability  
VSWRs  
1.5:1  
FUNCTIONAL CHARACTERISTICS @ 25°C  
Bvces  
Ices  
θjc1  
Collector to Emitter Breakdown  
Collector to Emitter Leakage  
Thermal Resistance  
Ic = 100 mA  
Vce = 50 Volts  
Rated Pulse Condition  
75  
Volts  
mA  
10  
0.65  
oC/W  
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT  
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.  
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324  
2008 - Rev. 1  

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