Datasheet > 10N65

10N65

更新时间： 2023-12-06 20:09:37

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
6页	722K
描述
场效应晶体管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

10N65 数据手册

10N65

N-Channel Enhancement Mode Field Effect Transistor

FEATURES



Extremely High dv/dt Capability.

100% AvalancheTtested.

Gate Charge Minimized.

Very Good Manufacturing Reliabilty.

APPLICATIONS



N-channel Enhancement mode Effect Transistor.



Switching Applications.

TO-220AB

MAXIMUM RATING operating temperature range applies unless otherwise specified

Value

Symbol

Parameter

Unit

V_DS

Drain-Source Voltage

650

Gate -Source Voltage

V_GS

±30

Maximum Drain Current(continuous) at T_C=25℃

T_C=100℃

I_D

5.7

Drain Current(pulsed)Note1

I_DM

Power Dissipation at T_C=25℃

G-S ESD (HBM C=100pF,R=1.5kΩ)

P_D

115

Vesd(G-S)

E_AS

4000

300

Single Pulse Avalanche Energy

(starting T_j=25℃,I_D=I_AR,V_DD=50V)

V/ns

℃/W

℃

Peak Diode Recovery Voltage Slope(Note2)

Thermal Resistance,Junction-to-Ambient

dv/dt

R_θJA

4.5

62.5

Operating Junction and StorageTem-perature Range

T_jT_stg

-55 to +150

Note:1.Pulse width limited by safe operating area

2.I_SO≤12A,di/dt≤400A/us,V_Peak<V_(BR)DSS

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20230527-P1

12 3 4 5 6

中文翻译

下载PDF

与10N65相关器件

型号	品牌	获取价格	描述	数据表
10N65_15	UTC	获取价格	N-CHANNEL MOSFET ARRAY FOR SWITCHING
10N65B	PINGWEI	获取价格	F10A mps,650 Volts N-CHANNEL MOSFET
10N65-C	UTC	获取价格	N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE
10N65F	SUNMATE	获取价格	N-CHANNEL POWER MOSFET
10N65F	PINGWEI	获取价格	F10A mps,650 Volts N-CHANNEL MOSFET
10N65F	MDD	获取价格	650V N-Channel Power MOSFET
10N65F	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:650V;持续漏极电流（Id）（在25°C
10N65G	SUNMATE	获取价格	N-CHANNEL POWER MOSFET
10N65G-T2Q-T	UTC	获取价格	N-CHANNEL MOSFET ARRAY FOR SWITCHING
10N65G-TA3-T	UTC	获取价格	10A, 650V N-CHANNEL POWER MOSFET