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10L100-DO-201AD PDF预览

10L100-DO-201AD

更新时间: 2022-02-26 13:15:05
品牌 Logo 应用领域
佑风微 - YFW /
页数 文件大小 规格书
3页 1076K
描述
Trench MOS Barrier Schottky Rectifier

10L100-DO-201AD 数据手册

 浏览型号10L100-DO-201AD的Datasheet PDF文件第2页浏览型号10L100-DO-201AD的Datasheet PDF文件第3页 
ꢀꢀꢀ  
10L100 DO-201AD  
Trench MOS Barrier Schottky Rectifier  
Features  
DO-201AD  
• Advanced trench technology  
• Low forward voltage drop  
• Low power losses  
10L100  
• High efficiency operation  
Lead Free Finish, RoHS Compliant  
Applications  
• DC/DC Converters  
• AC/DC Adaptors  
Cathode  
Anode  
Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)  
Parameter  
Symbol  
Limit  
100  
10  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
Operating junction and storage temperature range  
Typical thermal resistance per diode  
VRRM  
A
I
F(AV)  
IFSM  
200  
-40 to +150  
22  
A
°C  
TJ  
, TSTG  
°C/W  
RƟJC  
(Mounted on FR-4 PCB)  
TYP.  
0.44  
0.39  
0.63  
0.58  
MAX.  
TJ=25°C  
TJ=125°C  
TJ=25°C  
TJ=125°C  
-
I
F
=2A  
VF(1)  
-
0.66  
-
V
I
F
=2A  
Instantaneous forward voltage  
I
F
=10A  
=10A  
I
F
T
J
=25°C  
uA  
Instantaneous reverse current per diode  
at rated reverse voltage  
Notes:  
-
-
60  
IR(2)  
T
J
=125°C  
40  
mA  
(1) Pulse test: 300 μs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width  
40 ms  
www.yfwdiode.com  

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