s
DIODE Type : 10EDB20
OUTLINE DRAWING
1A 200V Tj =150 °C
FEATURES
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 26mm and 52mm Inside Tape Spacing Package
Available
Maximum Ratings
Approx Net Weight:0.17g
Symbol
VRRM
10EDB20
200
Unit
V
Rating
Repetitive Peak Reverse Voltage
50Hz
Half Sine Wave
Resistive Load
Ta=39°C *1
1.0
Average Rectified Output Current
IO
A
Ta=26°C *2
0.9
RMS Forward Current
Surge Forward Current
IF(RMS)
1.57
A
A
50Hz Half Sine Wave,1cycle,
Non-repetitive
IFSM
45
Operating JunctionTemperature Range
Storage Temperature Range
Tjw
Tstg
- 40 to + 150
- 40 to + 150
°C
°C
Electrical • Thermal Characteristics
Symbol
Conditions
Min. Typ. Max. Unit
Characteristics
Peak Reverse Current
Peak Forward Voltage
IRM
VFM
-
-
-
-
-
-
-
-
10
1.0
110
140
Tj= 25°C, VRM= VRRM
Tj= 25°C, IFM= 1.0A
Junction to P.C. Board mounted*1
µA
V
Thermal Resistance
Rth(j-a)
°C/W
Ambient
Without Fin *2
*1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)
*2: Without Fin or P.C. Board mounted