Datasheet > 10EDA10

10EDA10

更新时间： 2023-12-06 20:08:04

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	738K
描述
Rectifier device Common rectifier diodes

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10EDA10 数据手册

10EDA10

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 100V

CURRENT: 1.0 A

Features

Miniature Size

Low Forward Voltage drop

Low Reverse Leakage Current

High Surge Capability

Mechanical Data

Case: D O - 4 1 Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

DO-41

Min

Dim

Max

25.40

4.06

5.21

0.864

2.72

Marking: Type Number

0.71

2.00

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Unit

10EDA10

100

Characteristic

Symbol

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RRM

50Hz

Resistive Load

Half Sine Wave

1.0

°C *1

Ta=39

RMS Forward Current

Surge Forward Current

50Hz Half Sine Wave,1cycle,

Non-repetitive

1.57

F(RMS)

Surge Forward Current

I_FSM

Operating JunctionTemperature Range

Storage Temperature Range

- 40 to + 150

°C

stg

Typ.

Min.

Unit

Max.

Symbol

Conditions

Tj= 25

Characteristics

µA

I_RM

C, V_RM

Peak Reverse Current

Peak Forward Voltage

= V_RRM

V_FM

Tj= 25

°C, I^FM

= 1.0A

1.0

110

140

P.C. Board mounted*1

Junction to

Ambient

Rth(j-a)

Thermal Resistance

C/W

Without Fin

1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides)

2: Without Fin or P.C. Board mounted

1 of 2

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