10DL2CZ47A,10FL2CZ47A,10GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
10DL2CZ47A, 10FL2CZ47A, 10GL2CZ47A
Unit in mm
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
•
•
•
•
Repetitive Peak Reverse Voltage
: V
= 200 V, 300 V, 400 V
RRM
Average Output Rectified Current : I = 10 A
O
Ultra Fast Reverse-Recovery Time : t = 35 ns (Max)
rr
Low Switching Losses and Output Noise
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
V
10DL2CZ47A
200
300
400
10
Repetitive Peak
Reverse Voltage
V
10FL2CZ47A
10GL2CZ47A
RRM
Average Output Rectified Current
I
I
A
A
O
JEDEC
―
―
50 (50H )
z
Peak One Cycle Surge Forward
Current (Sine Wave)
FSM
JEITA
55 (60H )
z
TOSHIBA
Weight : 2.0g
12-10C1A
Junction Temperature
Storage Temperature Range
Screw Torque
T
T
−40~150
−40~150
0.6
°C
°C
j
stg
―
N·m
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
10DL2CZ47A
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
0.98
1.3
1.8
10
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Peak Forward
Voltage
V
I
=5A
FM
10FL2CZ47A
10GL2CZ47A
10DL2CZ47A
10FL2CZ47A
10GL2CZ47A
(Note 1)
FM
(Note 1)
Repetitive Peak
Reverse Current
I
V
=Rated
RRM
μA
10
RRM
(Note 1)
50
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
t
rr
I =2A, di / dt=−20A / μs
ns
ns
―
F
(Note 1)
t
I =1A
F
―
fr
R
th (j-c)
Total DC, Junction to Case
°C / W
―
Note 1 : A value applied to one cell.
1
2006-11-08