Datasheet > 10A6

10A6

更新时间： 2024-11-25 14:51:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1671K
描述
R-6

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数据手册

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10A6 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

R-6 Plastic-Encapsulate Diodes

G eneral Purpose Rectifier Diodes

10A05 THRU 10A10

Features

● I_F(AV)

10A

R-6

● VRRM

50V-1000V

● High surge current capability

●

Polarity: Color band denotes cathode

Applications

● Rectifier

Marking

● 10AX

X From 05 To 10

Limiting Values(Absolute Maximum Rating)

10A

Item

Symbol Unit

Test Conditions

V_RRM

V_RMS

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

50 100

35 70

800 1000

600

200 400

140 280 420 560

700

60Hz Half-sine wave，

Resistance load，T_L=60 ℃

Average Forward Current

10.0

I_F(AV)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

400

I_FSM

-55 ~ +150

Junction Temperature

Storage Temperature

T_J

℃

-55 ~ +150

T_STG

Electrical Characteristics (T=25℃ Unless otherwise specified）

Item

Symbol

Max

Unit

Test Condition

V_F

1.0

I_F=10.0A

Peak Forward Voltage

10.0

100

150

T =25℃

I_RRM1

I_RRM2

Peak Reverse Current

V_RM=V_RRM

μA

T =100℃

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

Typical junction capacitance

C_J

R_θ

Between junction and ambient

J-A

Thermal

Resistance(Typical)

℃/

R_θ

Between junction and Lead

J-L

Notes:

Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

www.jscj-elec.com

Rev. - 1.0

12 3 4

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