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10A4 PDF预览

10A4

更新时间: 2024-01-10 10:45:56
品牌 Logo 应用领域
NAINA 二极管
页数 文件大小 规格书
2页 112K
描述
Silicon Rectifier, 10.0A

10A4 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.71
其他特性:STANDARD: MIL-R-26安装特点:THROUGH HOLE MOUNT
最低工作温度:-55 °C封装形状:TUBULAR PACKAGE
额定温度:25 °C电阻器类型:FIXED RESISTOR
子类别:Fixed Resistors表面贴装:NO
技术:WIRE WOUND端子形状:WIRE
Base Number Matches:1

10A4 数据手册

 浏览型号10A4的Datasheet PDF文件第2页 
10A05 - 10A10  
Naina Semiconductor Ltd.  
Silicon Rectifier, 10.0A  
Features  
Diffused junction  
Low cost  
Low reverse leakage current  
High current capability & low forward voltage drop  
Plastic material carrying UL recognition 94V-0  
Polarity: Color Band denotes Cathode  
Lead free finish  
Thermal and Mechanical Specifications (TA = 250C unless otherwise  
specified)  
Symbol  
Values  
Units  
Parameters  
Maximum operating junction  
temperature range  
- 55 to +  
125  
TJ  
0C  
Maximum storage temperature  
range  
- 55 to +  
150  
TStg  
0C  
Typical thermal resistance junction  
to ambient  
JEDEC R-6  
RθJA  
W
10  
0C/W  
g
Approximate weight  
2.1  
Electrical Characteristics (TA = 250C unless otherwise specified)  
Parameter  
Symbol  
Units  
10A05 10A1 10A2 10A4 10A6 10A8 10A10  
Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward output  
current @ TA = 500C  
IF(AV)  
10  
600  
1.0  
A
Peak forward surge current (8.3ms)  
single half sine-wave superimposed  
on rated load  
IFSM  
A
Maximum DC forward voltage drop  
per element @ 10 A  
VF  
CJ  
V
Typical junction capacitance  
150  
10  
pF  
TA = 250C  
Maximum DC reverse  
current at rated DC  
blocking voltage  
IR  
µA  
TA = 1000C  
100  
1
D-95, Sector 63, Noida – 201301, India  
Tel: 0120-4205450  
Fax: 0120-4273653  
sales@nainasemi.com  
• www.nainasemi.com  

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