10A05 THRU 10A10
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current -
10.0 Amperes
R-6
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
1.0 (25.4)
MIN.
molded plastic technique
0.360 (9.1)
0.340(8.6)
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
DIA.
0.360(9.1)
0.340(8.6)
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
MECHANICAL DATA
0.052 (1.3)
0.048 (1.2)
Case: R-6 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight:0.072 ounce, 2.05 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
UNITS
10A05 10A1 10A2 10A4 10A6 10A8 10A10
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200 400
140 280
200 400
600
420
600
800 1000 VOLTS
VRRM
VRMS
VDC
560
700
VOLTS
100
800 1000 VOLTS
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=60 C
Peak forward surge current
I(AV)
10.0
Amps
IFSM
600
1.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
VF
IR
Maximum instantaneous forward voltage at 10.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
10.0
100
µ
A
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
RθJA
pF
C/W
C
150
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
10.0
TJ,TSTG
-50 to +150
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC