Datasheet > 10A1

10A1

更新时间： 2024-11-23 06:23:03

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TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

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10A1 数据手册

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

10A05 THRU 10A10

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

VOLTAGE：50-1000V

CURRENT：10.0A

FEATURES

·Low cost

R-6

·Low leakage

·Low forward voltage drop

·High current capability

·High surge current capability

MECHANICAL DATA

·Case: Molded plastic

·Epoxy: UL94V-0 rate flame retardant

·Lead: MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color band denotes cathode end

·Mounting position: Any

Dimensions in inches and (millimeters)

·Weight: 2.08 grams

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

10A05 10A1 10A2 10A4 10A6 10A8 10A10

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum DC Blocking Voltage

100

Maximum Average Forward rectified Current

at T_A=75°C

I_o

10.0

300

1.0

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

I_FSM

V_F

Maximum Instantaneous forward Voltage at10.0A

@ T_A=25°C

Maximum DC Reverse Current

at Rated DC Blocking Voltage

500

@ T_A=100°C

I_R

µA

Maximum Full Load Reverse Current Average,

Full Cycle .375”(9.5mm) lead length at T_L=75°C

Typical Junction Capacitance (Note)

Typical Thermal Resistance

C_J

150

R_θJA

°C/W

Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts

１

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