Datasheet > 10A030

10A030

更新时间： 2024-02-12 16:39:42

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	59K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| SOT-122A

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10A030 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

10A030 数据手册

10A030

3 Watts, 20 Volts, Class A

Linear to 1000 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55FT, STYLE 2

The 10A030 is a COMMON EMITTER transistor capable of providing 3

Watts of Class A, RF Output power to 1000 MHz. This transistor is

specifically designed for general Class A amplifier applications. It utilizes

gold metalization and diffused ballasting to provide high reliability and

supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC

13 Watts

Maximum Voltage and Current

BVces

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

50 Volts

3.5 Volts

1.5 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 150^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Pout

VSWR

Power Out

Power Input

Power Gain

Transition Frequency

Load Mismatch Tolerance

F = 1.0 GHz

Ic = 440 mA

Vcc = 20 Volts

Vce = 20, Ic= 440 mA

3.0

Watts

0.5

7.8

2.5

8.5

GHz

30:1

BVebo

BVces

BVceo

H_FE

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC Current Gain

Output Capacitance

Thermal Resistance

Ie = 3 mA

Ic = 20 mA

Vce=5V, Ic = 200mA

Vcb =28 V, f = 1 MHz

3.5

Volts

120

Cob

7.3

12.5

^oC/W

θjc

Issue February 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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