Datasheet > 100GAL12DN2

100GAL12DN2

更新时间： 2022-01-19 03:45:00

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
5页	80K
描述
IGBT Module

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

100GAL12DN2 数据手册

BSM 100 GAL 120 DN2

IGBT Power Module

• Single switch with chopper diode at collector

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

Package

Ordering Code

BSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

Ω

= 20 k

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

150

100

T = 80 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

300

200

T = 80 °C

Power dissipation per IGBT

tot

T = 25 °C

800

Chip temperature

+ 150

°C

Storage temperature

-40 ... + 125

stg

Thermal resistance, chip case

Diode thermal resistance, chip case

Diode thermal resistance, chip-case,chopper

Insulation test voltage, t = 1min.

Creepage distance

≤ 0.16

≤ 0.3

K/W

thJC

THJC

≤

0.25

2500

Vac

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

sec

40 / 125 / 56

Nov-24-1997

12 3 4 5

下载PDF

与100GAL12DN2相关器件

型号	品牌	描述	获取价格	数据表
100GASD10	VISHAY	Ceramic Capacitor, Ceramic, 10000V, Y5U, 0.001uF	获取价格
100GAST25	VISHAY	Ceramic Capacitor, Ceramic, 10000V, Y5R, 0.00025uF	获取价格
100GAST50	VISHAY	Ceramic Capacitor, Ceramic, 10000V, Y5R, 0.0005uF	获取价格
100GAT50	VISHAY	Ceramic Capacitor, Ceramic, 10000V, X5F, 0.0005uF	获取价格
100GATD10	VISHAY	Ceramic Capacitor, Ceramic, 10000V, N4700, 0.001uF	获取价格
100GB120DN2	ETC	IGBT Module	获取价格