型号 | 品牌 | 获取价格 | 描述 | 数据表 |
10-PG07N3A030S5-M894F96T | VINCOTECH |
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High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt | |
10-PG07N3A050S5-M896F96T | VINCOTECH |
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High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt | |
10-PG07ORA100RO-LJ51I48T | VINCOTECH |
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SiC diode No diode recovery losses Very fast switching | |
10-PG07ORA160RF-LJ53I88T | VINCOTECH |
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Low diode recovery losses;Low reverse recovery time and recovery charge;Designed for high | |
10-PG123BA080SH01-LN68L38T | VINCOTECH |
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Easy paralleling;High speed switching;Low switching losses | |
10-PG123BA080SH11-LN68L33T | VINCOTECH |
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Easy paralleling;High speed switching;Low switching losses | |
10-PG123BA080SH21-LN68L18T | VINCOTECH |
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Easy paralleling;High speed switching;Low switching losses | |
10-PG126PA010MR-L820F88T | VINCOTECH |
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Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode | |
10-PG12APA015SH01-PB18E08T | VINCOTECH |
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Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optim | |
10-PG12NAB008ME-LC59F66T | VINCOTECH |
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High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech |