Datasheet > 10-FY07BIA050SM-M523E38-3

10-FY07BIA050SM-M523E38-3

更新时间： 2022-02-26 13:25:36

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
9页	337K
描述
Ultra High-Speed IGBT and Diode

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10-FY07BIA050SM-M523E38-3 数据手册

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10-FY07BIA050SM-M523E38

10-PY07BIA050SM-M523E38Y

target datasheet

flow SOL 1 BI

650 V / 50 A

Features

flow 1 12mm housing

Booster:

● Dual boost topology

● Ultra HighꢀSpeed IGBT and Diode

● High efficiency bypass rectifier

Inverter:

● Split Output HꢀBridge topology

● HighꢀSpeed IGBT and Diode

● Integrated DC capacitors

● Temperature sensor

Schematic

Target applications

● Power Supply

● Solar

● Welding

Types

● 10ꢀFY07BIA050SMꢀM523E38

● 10ꢀPY07BIA050SMꢀM523E38Y

Maximum Ratings

j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

In. Boost Switch\H-Bridge Switch

Collectorꢀemitter voltage

650

V_CES

Collector current

I_C

T_j= T_jmax

T_S=80 °C

Repetitive peak collector current

Total power dissipation

Gateꢀemitter voltage

I _CRM

P_tot

V_GES

T_jmax

t_plimited by T_jmax

T_j= T_jmax

150

±20

175

Maximum Junction Temperature

°C

19 Okt. 2015 / Revision 1

12 3 4 5 6 7...9

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