Datasheet > 10-EY122PA008ME01-LU38F06T

10-EY122PA008ME01-LU38F06T

更新时间： 2024-04-24 09:03:43

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6892K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-EY122PA008ME01-LU38F06T 数据手册

10-EY122PA008ME01-LU38F06T

datasheet

flowDUAL E2 SiC

1200 V / 8 mΩ

Topology features

flow E2 12 mm housing

● Temperature sensor

● Half Bridge

Component features

● High Blocking Voltage with low drain source on state resistance

● High speed SiC-MOSFET technology

● Resistant to Latch-up

Housing features

● Base isolation: AlN

● Convex shaped substrate for superior thermal contact

● Compact housing

● CTI600 housing material

● Thermo-mechanical push-and-pull force relief

● Press-fit pin

● Reliable cold welding connection

Schematic

Extra features

● AlN Substrate for enhanced thermal performance

Target applications

● Charging Stations

● Energy Storage Systems

● Power Supply

● Solar Inverters

● Welding & Cutting

Types

● 10-EY122PA008ME01-LU38F06T

13 Sep. 2023 / Revision 1

12 3 4 5 6 7...17

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