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1.5SMC82CA PDF预览

1.5SMC82CA

更新时间: 2024-02-06 05:55:39
品牌 Logo 应用领域
东沃 - dowosemi 二极管光电二极管局域网
页数 文件大小 规格书
3页 707K
描述
表面贴装的TransZorb瞬态电压抑制器 Surface Mount TRANSZORB Transient Voltage Suppressors

1.5SMC82CA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:16 weeks风险等级:5.61
Is Samacsys:N最大击穿电压:86.1 V
最小击穿电压:77.9 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL参考标准:IEC-61000-4-2, 4-4, 4-5
最大重复峰值反向电压:70.1 V表面贴装:YES
技术:AVALANCHE端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1.5SMC82CA 数据手册

 浏览型号1.5SMC82CA的Datasheet PDF文件第2页浏览型号1.5SMC82CA的Datasheet PDF文件第3页 
东沃电子  
DOWOSEMI  
1.5SMC Series  
Breakdown Voltage: 6.8 to 600 V  
Peak Pulse Power: 1500 W  
Surface Mount  
Transient Voltage Suppressors  
SMC/ DO-214AB  
Features  
˗
Glass passivated chip  
˗
1500 W peak pulse power capability with a  
10/1000 ȝs waveform, repetitive rate (duty  
cycle):0.01 %  
˗
˗
˗
˗
˗
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
Mechanical Data  
˗
˗
˗
Case: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Solderable per MIL-STD-750, method  
2026  
˗
˗
Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25ɗ unless otherwise noted)  
Value  
1500  
UNIT  
W
Parameter  
Symbol  
Peak power dissipation with a 10/1000ȝs waveform(1)  
PPP  
Peak pulse current wih a 10/1000ȝs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
See Next Table  
6.5  
A
W
IFSM  
200  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 100 A for  
unidirctional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
TEL:0571-87006810  
www.dowosemi.com  
Page 1  

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