1.5SMC Series
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available inuni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-214AB (SMC)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VBR uni-directional
6.8 V to 540 V
6.8 V to 220 V
1500 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
V
BR bi-directional
PPPM
PD
6.5 W
I
FSM (uni-directional only)
TJ max.
200 A
150 °C
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
1.5SMC220CA).
Electrical characteristics apply in both directions.
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VALUE
1500
UNIT
W
Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)
Power dissipation on infinite heatsink TA = 50 °C
PPPM
IPPM
PD
See next table
6.5
A
W
Peak forward surge current 8.3 ms single half sine-wave
uni-directional only (2)
IFSM
200
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal
Document Number: 88303
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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