Datasheet > 1.5KE600T-G

1.5KE600T-G

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
6页	68K
描述
Trans Voltage Suppressor Diode, 487.2V V(RWM), Unidirectional,

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中文翻译

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技术参数
数据手册

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1.5KE600T-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.8
击穿电压标称值：	600 V	最大钳位电压：	864 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
极性：	UNIDIRECTIONAL	最大重复峰值反向电压：	487.2 V
子类别：	Transient Suppressors	表面贴装：	NO
端子面层：	Tin (Sn)	Base Number Matches：	1

1.5KE600T-G 数据手册

COMCHIP

1500W Transient Voltage Suppressor

SMD Diodes Specialist

1.5KE-G Series

Stand-off Voltage: 6.8 ~ 600V

Power Dissipation: 1500 Watts

RoHS Device

Features

DO-201

-Glass passivated chip.

-Low leakage.

-1500W peak pulse power capability with a 10/1000μs

waveform, repetitive rate (duty cycle): 0.01%.

-Uni and Bidirectional unit.

1.000(25.40) Min.

-Excellent clamping capability.

-Very fast response time.

0.375(9.53)

0.285(7.24)

0.209(5.30) DIA.

0.189(4.79) DIA.

Mechanical Data

1.000(25.40) Min.

-Case: Molded plastic DO-201

-Epoxy: UL 94V-0 rate flame retardant

-Terminals: Axial leads, solderable per

MIL-STD-202, Method 208 guranteed

-Polarity: Color band denotes cathode

end except Bipolar

0.042(1.07) DIA.

0.038(0.97) DIA.

Dimensions in inches and (millimeter)

-Mounting position: Any

-Approx. weight: 0.844 grams

Maximum Ratings and Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Peak power dissipation with a 10/1000μs

waveform(Note 1)

PPP

1500

Peak pulse current with a 10/1000μs waveform

(Note 1)

IPP

See Next Table

6.5

Power dissipation on infinite heatsink at TL=75°C

Peak forward surge current, 8.3ms single

half sine-wave unidirectional only

(JEDEC method) (Note 2)

IFSM

200

Maximum instantaneous forward voltage at

100 A for unidirectional only(Note 3)

3.5/5.0

Operating junction and storage

temperature range

TJ, TSTG

-55 to +150

°C

NTOES:

(1) Non-repetitive current pulse, per fig.5 and derated above TA=25°C per fig.1

(2) Measured on 8.3ms single half sine-wave or equivalent square wave, equare wave, duty cycle=4 pulses per minute maximum

(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

REV:B

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