1N6267A Series
1500 Watt Mosorb Zener
Transient Voltage
Suppressors
Unidirectional*
http://onsemi.com
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Cathode
Anode
Specification Features:
AXIAL LEAD
CASE 41A
PLASTIC
• Working Peak Reverse Voltage Range – 5.8 V to 214 V
• Peak Power – 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
L
1N6
xxxA
1.5KE
xxxA
YYWW
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
Mechanical Characteristics:
L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
500 Units/Box
MAXIMUM RATINGS
1.5KExxxA
Axial Lead
Rating
Symbol
Value
Unit
1.5KExxxARL4
Axial Lead 1500/Tape & Reel
Peak Power Dissipation (Note 1)
P
PK
1500
Watts
@ T ≤ 25°C
L
1N6xxxA
Axial Lead
500 Units/Box
Steady State Power Dissipation
P
D
5.0
Watts
1N6xxxARL4*
Axial Lead 1500/Tape & Reel
@ T ≤ 75°C, Lead Length = 3/8″
L
*1N6302A Not Available in 1500/Tape & Reel
Derated above T = 75°C
20
20
mW/°C
°C/W
L
Thermal Resistance, Junction–to–Lead
Forward Surge Current (Note 2)
R
q
JL
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
I
200
Amps
FSM
@ T = 25°C
A
Operating and Storage
Temperature Range
T , T
– 65 to
+175
°C
J
stg
1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per
A
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
June, 2002 – Rev. 5
1N6267A/D