Datasheet > 1.5KE13C-B

1.5KE13C-B

更新时间： 2024-01-27 18:20:33

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	932K
描述
TVS DIODE 11.1V 19.11V DO201

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技术参数
数据手册

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1.5KE13C-B 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-201
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.13
其他特性：	EXCELLENT CLAMPING CAPABILITY	最大击穿电压：	13.7 V
最小击穿电压：	12.4 V	击穿电压标称值：	13 V
外壳连接：	ISOLATED	最大钳位电压：	18.2 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-201
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
湿度敏感等级：	2	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	260
极性：	BIDIRECTIONAL	最大功率耗散：	6.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	11.1 V
子类别：	Transient Suppressors	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	30

1.5KE13C-B 数据手册

TVS Diodes

Axial Leaded – 1500W > 1.5KE series

Pb e3

RoHS

1.5KE Series

Description

The 1.5KE Series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Uni-directional

Features

Bi-directional

• 1500W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Low incremental surge

resistance

• Typical I_Rless than 1μA

when V_BRmin>12V

• Glass passivated chip

junction in DO-201

Package

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

• High temperature

to reﬂow soldering

guaranteed: 260°C/30sec

/ 0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

Agency Approvals

Agency

Agency File Number

E230531

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol Value

Unit

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

30kV(Air), 30kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

Peak Pulse Power Dissipation (Fig.2) by

10/1000μsTest Waveform (Fig.4) (Note 1)

-Single Die Parts

Peak Pulse Power Dissipation(Fig.2) by

10/1000μsTest Waveform(Fig.4)(Note 1)

-Stacked Die Parts (Note 4)

P_PPM

1500

2000

P_PPM

Steady State Power Dissipation on Inﬁnite Heat

Sink atT_L=75ºC

P_D

I_FSM

V_F

6.5

200

Peak Forward Surge Current, 8.3ms Single Half

Sine Wave Unidirectional Only (Note 2)

Maximum Instantaneous Forward Voltage at

100A for Unidirectional Only (Note 3)

3.5/5.0

Operating Junction and StorageTemperature

Range

-55 to

175

T_J, T_STG

R_θJL

°C

TypicalThermal Resistance Junction to Lead

°C/W

TypicalThermal Resistance Junction to Ambient R_θJA

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated above T_J(initial) =25^OC per Fig. 3.

Applications

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per minute maximum.

3. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

4. For stacked die component details, please refer to part numbers labeled by * in Electrical Characteristics.

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

Functional Diagram

Additional Infomarion

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Sꢀꢁꢂꢃes

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Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: JC.10/30/20

12 3 4 5 6

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