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1.4KESD51CE3

更新时间： 2024-11-19 13:57:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 179K
描述
Trans Voltage Suppressor Diode, 1400W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC SELAD, GLASS, DO-35, 2 PIN

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1.4KESD51CE3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-35包装说明：O-LALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84其他特性：LOW CAPACITANCE
最小击穿电压：56.7 V外壳连接：ISOLATED
最大钳位电压：113.4 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-204AHJESD-30 代码：O-LALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：1400 W
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified最大重复峰值反向电压：51 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1.4KESD51CE3 数据手册

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1.4KESD5.0 thru 1.4KESD170CA, e3  
AXIAL-LEAD TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These small axial-leaded TVS devices feature the ability to clamp  
dangerous high voltage short-term transients such as produced by directed  
or radiated electrostatic discharge phenomena before entering sensitive  
component regions of a circuit design. They are small economical transient  
voltage suppressors targeted primarily for short-term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as illustrated in Figure #1.  
DO-35  
(DO-204AH)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Excellent protection in clamping direct ESD level  
transients in excess of 15,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
•
•
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Absorbs ESD level transients* of 1400 Watts per MIL-  
STD-750, Method 1020 (approx. 150 ns exponential  
wave, or one microsecond transients up to 400 watts.  
See Figure #1 and #2 for overall transient Peak Pulse  
Power.  
Low inherent capacitance for high-frequency  
applications (See Figure #4)  
•
•
Flexible axial-lead mounting terminals  
Bidirectional features available by adding a “C” or  
“CA” suffix  
•
•
•
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5 V to 170 V  
Hermetic DO-35 Package. Also available in surface  
mount DO-213AA MELF package (see separate data  
sheet)  
•
•
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
400 Watts for One Microsecond Square Wave or  
1400 watts per ESD Wave form of MIL-STD-750,  
method 1020.  
•
CASE: Hermetically sealed axial-lead glass DO-35  
(DO-204AH) package  
•
FINISH: Tin-lead or RoHS Compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
•
•
•
See Surge Rating curve in Figures #1 and 2.  
Operating and storage temperature –65oC to 175oC  
•
•
•
•
POLARITY: Banded end is cathode  
WEIGHT: 0.2 grams (typical)  
MARKING: Part number  
THERMAL RESISTANCE: Less than 250oC/W  
junction to lead at 0.375 inches from body.  
•
•
•
DC power dissipation 500 mW at TL = 75oC at 3/8  
inch (10 mm) lead length from body.  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
Derate at 2.3 W/oC above 25oC for PPP (1μs) and at  
•
See package dimension on last page  
5 mW/oC above 100oC for dc power.  
Forward Surge Current 50 amps for 1μs at TL = 25oC  
(rise time > 100 ns).  
Copyright © 2006  
3-29-2006 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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