Datasheet > 1.4KESD33CE3TR

1.4KESD33CE3TR

更新时间： 2024-11-28 11:00:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	173K
描述
Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC SELAD, GLASS, DO-35, 2 PIN

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技术参数
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1.4KESD33CE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-35	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.75	其他特性：	LOW CAPACITANCE
最小击穿电压：	36.7 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-204AH
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	1400 W	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	0.5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	33 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED

1.4KESD33CE3TR 数据手册

1.4KESD5.0 thru 1.4KESD170CA, e3

AXIAL-LEAD TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small axial-leaded TVS devices feature the ability to clamp

dangerous high voltage short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-35

(DO-204AH)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 15,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients* of 1400 Watts per MIL-

STD-750, Method 1020 (approx. 150 ns exponential

wave, or one microsecond transients up to 400 watts.

See Figure #1 and #2 for overall transient Peak Pulse

Power.

Low inherent capacitance for high-frequency

applications (See Figure #4)

•

Flexible axial-lead mounting terminals

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5 V to 170 V

Hermetic DO-35 Package. Also available in surface

mount DO-213AA MELF package (see separate data

sheet)

•

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

400 Watts for One Microsecond Square Wave or

1400 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed axial-lead glass DO-35

(DO-204AH) package

•

FINISH: Tin-lead or RoHS Compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

•

POLARITY: Banded end is cathode

WEIGHT: 0.2 grams (typical)

MARKING: Part number

THERMAL RESISTANCE: Less than 250^oC/W

junction to lead at 0.375 inches from body.

•

DC power dissipation 500 mW at T_L= 75^oC at 3/8

inch (10 mm) lead length from body.

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

Derate at 2.3 W/^oC above 25^oC for P_PP(1μs) and at

•

See package dimension on last page

5 mW/^oC above 100^oC for dc power.

Forward Surge Current 50 amps for 1μs at T_L= 25^oC

(rise time > 100 ns).

3-29-2006 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与1.4KESD33CE3TR相关器件

型号	品牌	获取价格	描述	数据表
1.4KESD33CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
1.4KESD33CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional,
1.4KESD33E3	MICROSEMI	获取价格	AXIAL-LEAD TVS
1.4KESD33E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1.4KESD33TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1.4KESD33TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional,
1.4KESD36	MICROSEMI	获取价格	AXIAL-LEAD TVS
1.4KESD36A	MICROSEMI	获取价格	AXIAL-LEAD TVS
1.4KESD36AE3	MICROSEMI	获取价格	AXIAL-LEAD TVS
1.4KESD36ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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