Datasheet > 1.4KESD33ATRE3

1.4KESD33ATRE3

更新时间： 2024-11-28 10:04:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
4页	173K
描述
Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1.4KESD33ATRE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.68
Is Samacsys：	N	最大钳位电压：	69.6 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	33 V	子类别：	Transient Suppressors
表面贴装：	NO	Base Number Matches：	1

1.4KESD33ATRE3 数据手册

1.4KESD5.0 thru 1.4KESD170CA, e3

AXIAL-LEAD TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small axial-leaded TVS devices feature the ability to clamp

dangerous high voltage short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-35

(DO-204AH)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 15,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients* of 1400 Watts per MIL-

STD-750, Method 1020 (approx. 150 ns exponential

wave, or one microsecond transients up to 400 watts.

See Figure #1 and #2 for overall transient Peak Pulse

Power.

Low inherent capacitance for high-frequency

applications (See Figure #4)

•

Flexible axial-lead mounting terminals

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5 V to 170 V

Hermetic DO-35 Package. Also available in surface

mount DO-213AA MELF package (see separate data

sheet)

•

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

400 Watts for One Microsecond Square Wave or

1400 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed axial-lead glass DO-35

(DO-204AH) package

•

FINISH: Tin-lead or RoHS Compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

•

POLARITY: Banded end is cathode

WEIGHT: 0.2 grams (typical)

MARKING: Part number

THERMAL RESISTANCE: Less than 250^oC/W

junction to lead at 0.375 inches from body.

•

DC power dissipation 500 mW at T_L= 75^oC at 3/8

inch (10 mm) lead length from body.

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

Derate at 2.3 W/^oC above 25^oC for P_PP(1μs) and at

•

See package dimension on last page

5 mW/^oC above 100^oC for dc power.

Forward Surge Current 50 amps for 1μs at T_L= 25^oC

(rise time > 100 ns).

3-29-2006 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与1.4KESD33ATRE3相关器件

型号	品牌	获取价格	描述	数据表
1.4KESD33C	ETC	获取价格	Transient Voltage Suppressor
1.4KESD33CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
1.4KESD33CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
1.4KESD33CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
1.4KESD33CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
1.4KESD33CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
1.4KESD33CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
1.4KESD33CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional,
1.4KESD33E3	MICROSEMI	获取价格	AXIAL-LEAD TVS
1.4KESD33E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1400W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与1.4KESD33ATRE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

1.4KESD33ATRE3

1.4KESD33ATRE3 技术参数

1.4KESD33ATRE3 数据手册

与1.4KESD33ATRE3相关器件

与1.4KESD33ATRE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1.4KESD33ATRE3

1.4KESD33ATRE3 技术参数

1.4KESD33ATRE3 数据手册

与1.4KESD33ATRE3相关器件

与1.4KESD33ATRE3相关文章

您还可以找

您在本页遇到什么问题？