Datasheet > 1.4KESD16C

1.4KESD16C

更新时间： 2024-01-27 11:06:44

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	190K
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1.4KESD16C 数据手册

1.4KESD5.0 thru 1.4KESD170CA

AXIAL-LEAD TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small axial-leaded TVS devices feature the ability to clamp

dangerous high voltage short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-35

(DO-204AH)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 15,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

Absorbs ESD level transients* of 1400 Watts per

MIL-STD-750, Method 1020 (approx. 150 ns

exponential wave, or one microsecond transients up

to 400 watts. See Figure #1 and #2 for overall

transient Peak Pulse Power.

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5 V to 170 V

Hermetic DO-35 Package. Also available in surface

mount DO-213AA MELF package (see separate

data sheet)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Low inherent capacitance for high-frequency

applications (See Figure #4)

•

Flexible axial-lead mounting terminals

Bidirectional features available by adding a “C” or

“CA” suffix

•

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

400 Watts for One Microsecond Square Wave or

1400 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed axial-lead glass DO-35

(DO-204AH) package

TERMINALS: Leads, tin-lead plated solderable per

MIL-STD-750, method 2026

POLARITY: Banded end is cathode

WEIGHT: 0.2 grams (typical)

MARKING: Part number

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

•

THERMAL RESISTANCE: Less than 250^oC/W

junction to lead at 0.375 inches from body.

•

DC power dissipation 500 mW at T_L= 75^oC at 3/8

inch (10 mm) lead length from body.

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

Derate at 2.3 W/^oC above 25^oC for P_PP(1µs) and at

•

See package dimension on last page

5 mW/^oC above 100^oC for dc power.

Forward Surge Current 50 amps for 1µs at T_L= 25^oC

(rise time > 100 ns).

Microsemi

Page 1

10-02-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与1.4KESD16C相关器件

型号	品牌	描述	获取价格	数据表
1.4KESD16CA	MICROSEMI	Trans Voltage Suppressor Diode, 1400W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2	获取价格
1.4KESD16CAE3	MICROSEMI	暂无描述	获取价格
1.4KESD16CATR	MICROSEMI	Trans Voltage Suppressor Diode, 1400W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2	获取价格
1.4KESD16CATRE3	MICROSEMI	Trans Voltage Suppressor Diode, 16V V(RWM), Bidirectional,	获取价格
1.4KESD16CE3	MICROSEMI	Trans Voltage Suppressor Diode, 1400W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2	获取价格
1.4KESD16CE3TR	MICROSEMI	Trans Voltage Suppressor Diode, 1400W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-2	获取价格

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