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0910-300M PDF预览

0910-300M

更新时间: 2024-11-18 02:51:19
品牌 Logo 应用领域
ADPOW 晶体射频双极晶体管雷达局域网
页数 文件大小 规格书
4页 108K
描述
300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz

0910-300M 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:unknown风险等级:5.64
其他特性:HIGH RELIABILITY外壳连接:BASE
最大集电极电流 (IC):20 A配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

0910-300M 数据手册

 浏览型号0910-300M的Datasheet PDF文件第2页浏览型号0910-300M的Datasheet PDF文件第3页浏览型号0910-300M的Datasheet PDF文件第4页 
0910-300M  
0910– 300M  
300 Watts - 50 Volts, 150µs, 5%  
Radar 890 - 1000 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55KT, STYLE 1  
The 0910-300M is an internally matched, COMMON BASE transistor capable  
of providing 300 Watts of pulsed RF output power at 150 µs pulse width, , 5%  
duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed  
transistor is specifically designed for P-Band radar applications. It utilizes gold  
metallization and diffused emitter ballasting to provide high reliability and  
supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC  
600 Watts  
Maximum Voltage and Current  
BVces  
BVebo  
Ic  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
65 Volts  
3.5 Volts  
20 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 200oC  
+ 200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
CHARACTERISTICS  
MIN  
TYP  
MAX UNITS  
SYMBOL  
TEST CONDITIONS  
Pout  
Pg  
Power Out  
Power Gain  
Collector Efficiency  
Input Return loss  
Load Mismatch Tolerance  
Freq = 890 – 1000 MHz  
Vcc = 50 Volts  
300  
9.6  
40  
425  
Watts  
dB  
%
dB  
dB  
45  
ηc  
Rl  
Pin = 33 Watts  
-9  
Pulse Width = 150µs  
Duty Factor = 5%  
0.5  
3:1  
2:1  
Droop  
VSWR1  
Droop  
Load Mismatch - Stability  
VSWRs  
Note 1: Pulse condition of 150µsec, 10%.  
Bvces  
Ices  
θjc1  
Collector to Emitter Breakdown  
Collector to Emitter Leakage  
Thermal Resistance  
Ic = 80 mA  
Vce = 50 Volts  
Rated Pulse Condition  
65  
Volts  
mA  
15  
0.29  
oC/W  
Issue Nov 2005  
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT  
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.  
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324  

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