Datasheet > 0809LD30

0809LD30

更新时间： 2024-11-26 23:13:11

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
1页	20K
描述
30 WATT, 28V, 1 GHz LDMOS FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

0809LD30 数据手册

R.0.2P.991602-BEHRE

0809LD30

30 WATT, 28V, 1 GHz

LDMOS FET

P R E L I M I N A R Y I S S U E

GENERAL DESCRIPTION

CASE OUTLINE

55QT

Common Source

0809LD30

The

is a common source N-Channel enhancement mode lateral

MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The

device is nitride passivated and utilizes gold metallization to ensure high

reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation @25 C (P_d)

110 W

Thermal Resistance (

)

1.6 C/W

Voltage and Current

Drain-Source (V_DSS

)

65V

20V

Gate-Source (V_GS)

Temperatures

-65 to +200 C

Storage Temperature

Operating Junction Temperature

+200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

V_gs= 0V, I_d= 2ma

Drain-Source Leakage Current V_ds= 28V, V_gs= 0V

MIN TYP MAX UNITS

Drain-Source Breakdown

V_dss

I_dss

I_gss

Gate-Source Leakage Current

V_gs= 20V, V_ds= 0V

V_gs(th)

V_ds(on)

g_FS

Gate Threshold Voltage

Drain-Source On Voltage

Forward Transconductance

Input Capacitance

V_ds= 10V, I_d= 10ma

V_gs= 10V, I_d= 2A

1.0

1.4

2.5

V_ds= 10V, I_d= 3A

V_ds= 28V, V_gs= 0V, F = 1 MHz

C_iss

C_rss

C_oss

Reverse Transfer Capacitance V_ds= 28V, V_gs= 0V, F = 1 MHz

Output Capacitance V_ds= 28V, V_gs= 0V, F = 1 MHz

FUNCTIONAL CHARACTERISTICS @ 25 C

G_PS

Common Source Power Gain

V_ds= 28V, I_dq= 0.15A,

F = 900MHz, P_out= 30W

V_ds= 28V, I_dq= 0.15A,

F = 900MHz, P_out= 30W

V_ds= 28V, I_dq= 0.3A,

P_out=30W_PEP, F₁= 900 MHz,

F₂= 900.1 MHz

Drain Efficiency

η_d

IMD₃

Intermodulation Distortion,

3^rdOrder

-30

dBc

Load Mismatch

V_ds= 28V, I_dq= 0.15A,

F = 900MHz, P_out= 30W

10:1

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

中文翻译

下载PDF

与0809LD30相关器件

型号	品牌	获取价格	描述	数据表
0809LD30P	ETC	获取价格	30 WATT, 28V, 1 GHz LDMOS FET
0809LD60	ETC	获取价格	60 WATT, 28V, 1 GHz LDMOS FET
0809LD60P	ETC	获取价格	60 WATT, 28V, 1 GHz LDMOS FET
080MD22ABMK1STD	KEMET	获取价格	MD/A901, Aluminum Electrolytic, 80 uF, 10%, 2
080MD26ABMK1STD	KEMET	获取价格	MD/A901, Aluminum Electrolytic, 80 uF, 10%, 2
080MS22ABMA1STD	KEMET	获取价格	MS/A902, Aluminum Electrolytic, 80 uF, -0/+25
080MS26AAMK1STD	KEMET	获取价格	MS/A902, Aluminum Electrolytic, 80 uF, 10%, 2
080MS26ACMA1STD	KEMET	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 25% +Tol, 0% -Tol, 80uF, Chass
080RSP1001B	RUBYCON	获取价格	CAP,AL2O3,1MF,80VDC,20% -TOL,20% +TOL
080SXP1001B	RUBYCON	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum, 80V, 20% +Tol, 20% -Tol, 1000uF