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0809LD30 PDF预览

0809LD30

更新时间: 2024-10-29 23:13:11
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描述
30 WATT, 28V, 1 GHz LDMOS FET

0809LD30 数据手册

  
R.0.2P.991602-BEHRE  
0809LD30  
30 WATT, 28V, 1 GHz  
LDMOS FET  
P R E L I M I N A R Y I S S U E  
GENERAL DESCRIPTION  
CASE OUTLINE  
55QT  
Common Source  
0809LD30  
The  
is a common source N-Channel enhancement mode lateral  
MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The  
device is nitride passivated and utilizes gold metallization to ensure high  
reliability and supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Power Dissipation  
°
Device Dissipation @25 C (Pd)  
110 W  
θ
°
Thermal Resistance (  
)
JC  
1.6 C/W  
Voltage and Current  
Drain-Source (VDSS  
)
65V  
±
20V  
Gate-Source (VGS)  
Temperatures  
°
-65 to +200 C  
Storage Temperature  
Operating Junction Temperature  
°
+200 C  
ELECTRICAL CHARACTERISTICS @ 25 C  
°
SYMBOL CHARACTERISTICS  
TEST CONDITIONS  
Vgs = 0V, Id = 2ma  
Drain-Source Leakage Current Vds = 28V, Vgs= 0V  
MIN TYP MAX UNITS  
Drain-Source Breakdown  
65  
70  
V
Β
Vdss  
Idss  
1
1
5
A
Igss  
Gate-Source Leakage Current  
Vgs = 20V, Vds = 0V  
A
Vgs(th)  
Vds(on)  
gFS  
Gate Threshold Voltage  
Drain-Source On Voltage  
Forward Transconductance  
Input Capacitance  
Vds = 10V, Id = 10ma  
Vgs = 10V, Id = 2A  
2
4
V
1.0  
1.4  
60  
2.5  
32  
V
S
pF  
pF  
pF  
Vds = 10V, Id = 3A  
Vds = 28V, Vgs = 0V, F = 1 MHz  
Ciss  
Crss  
Coss  
Reverse Transfer Capacitance Vds = 28V, Vgs = 0V, F = 1 MHz  
Output Capacitance Vds = 28V, Vgs = 0V, F = 1 MHz  
FUNCTIONAL CHARACTERISTICS @ 25 C  
°
GPS  
Common Source Power Gain  
Vds = 28V, Idq = 0.15A,  
F = 900MHz, Pout = 30W  
Vds = 28V, Idq = 0.15A,  
F = 900MHz, Pout = 30W  
Vds = 28V, Idq = 0.3A,  
Pout =30WPEP, F1 = 900 MHz,  
F2 = 900.1 MHz  
14  
50  
dB  
%
Drain Efficiency  
ηd  
IMD3  
Intermodulation Distortion,  
3rd Order  
-30  
dBc  
Load Mismatch  
Vds = 28V, Idq = 0.15A,  
F = 900MHz, Pout = 30W  
10:1  
Ψ
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE  
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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