Datasheet > 0809LD120

0809LD120

更新时间： 2024-10-29 23:13:11

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描述
120 WATT, 28V, 1 GHz LDMOS FET

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0809LD120 数据手册

R.0.2P.991602-BEHRE

0809LD120

120 WATT, 28V, 1 GHz

LDMOS FET

P R E L I M I N A R Y I S S U E

GENERAL DESCRIPTION

CASE OUTLINE

55QV

Common Source

0809LD120

The

is a common source N-Channel enhancement mode lateral

MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The

device is nitride passivated and utilizes gold metallization to ensure high

reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation @25 C (P_d)

300 W

Thermal Resistance (

)

.6 C/W

Voltage and Current

Drain-Source (V_DSS

)

65V

20V

Gate-Source (V_GS)

Temperatures

-65 to +200 C

Storage Temperature

Operating Junction Temperature

+200 C

ELECTRICAL CHARACTERISTICS @ 25 C PER SIDE

SYMBOL CHARACTERISTICS

Drain-Source Breakdown

Drain-Source Leakage Current V_ds= 28V, V_gs= 0V

TEST CONDITIONS

MIN TYP MAX UNITS

V_gs= 0V, I_d= 2ma

V_dss

I_dss

I_gss

Gate-Source Leakage Current

V_gs= 20V, V_ds= 0V

V_gs(th)

V_ds(on)

Gate Threshold Voltage

Drain-Source On Voltage

Forward Transconductance

V_ds= 10V, I_d= 100ma

V_gs= 10V, I_d= 3A

V_ds= 10V, I_d= 3A

0.7

2.2

g_FS

C_rss

C_oss

Reverse Transfer Capacitance V_ds= 28V, V_gs= 0V, F = 1 MHz

Output Capacitance V_ds= 28V, V_gs= 0V, F = 1 MHz

This part is input matched

FUNCTIONAL CHARACTERISTICS @ 25 C

G_PS

Common Source Power Gain

V_ds= 28V, I_dq= 0.6A,

F = 900MHz, P_out= 120W

V_ds= 28V, I_dq= 0.6A,

F = 900MHz, P_out= 120W

V_ds= 28V, I_dq= 0.6A,

P_out=120W ^PEP, F₁= 900 MHz,

F₂= 900.1 MHz

Drain Efficiency

η_d

IMD₃

Intermodulation Distortion,

3^rdOrder

-30

dBc

Load Mismatch

V_ds= 28V, I_dq= 0.6A,

F = 900MHz, P_out= 120W

5:1

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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