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08051J1R5Q4TTR PDF预览

08051J1R5Q4TTR

更新时间: 2024-11-17 14:40:03
品牌 Logo 应用领域
京瓷/艾维克斯 - KYOCERA AVX /
页数 文件大小 规格书
18页 1525K
描述
Thin Film Capacitor

08051J1R5Q4TTR 数据手册

 浏览型号08051J1R5Q4TTR的Datasheet PDF文件第2页浏览型号08051J1R5Q4TTR的Datasheet PDF文件第3页浏览型号08051J1R5Q4TTR的Datasheet PDF文件第4页浏览型号08051J1R5Q4TTR的Datasheet PDF文件第5页浏览型号08051J1R5Q4TTR的Datasheet PDF文件第6页浏览型号08051J1R5Q4TTR的Datasheet PDF文件第7页 
Thin-Film RF/Microwave Capacitor Technology  
Automotive Grade Accu-P® Series  
Thin-Film Technology  
THE IDEAL CAPACITOR  
THIN-FILM TECHNOLOGY  
The non-ideal characteristics of a real capacitor can be ignored at low  
frequencies. Physical size imparts inductance to the capacitor and  
dielectric and metal electrodes result in resistive losses, but these often  
are of negligible effect on the circuit. At the very high frequencies of radio  
communication (>100MHz) and satellite systems (>1GHz), these effects  
become important. Recognizing that a real capacitor will exhibit inductive  
and resistive impedances in addition to capacitance, the ideal capacitor for  
these high frequencies is an ultra low loss component which can be fully  
characterized in all parameters with total repeatability from unit to unit.  
Thin-film technology is commonly used in producing semiconductor devices.  
In the last two decades, this technology has developed tremendously, both  
in performance and in process control. Today’s techniques enable line  
definitions of below 1μm, and the controlling of thickness of layers at 100Å  
(10-2μm). Applying this technology to the manufacture of capacitors has  
enabled the development of components where both electrical and physical  
properties can be tightly controlled.  
The thin-film production facilities at KYOCERA AVX consist of:  
Class 1000 clean rooms, with working areas under laminar-flow hoods  
of class 100, (below 100 particles per cubic foot larger than 0.5μm).  
High vacuum metal deposition systems for high-purity  
electrode construction.  
Photolithography equipment for line definition down to 2.0μm  
accuracy.  
Plasma-enhanced CVD for various dielectric depositions  
(CVD=Chemical Vapor Deposition).  
High accuracy, microprocessor-controlled dicing saws for  
chip separation.  
High speed, high accuracy sorting to ensure strict tolerance adherence.  
Until recently, most high frequency/microwave capacitors were based on  
fired-ceramic (porcelain) technology. Layers of ceramic dielectric material  
and metal alloy electrode paste are interleaved and then sintered in a  
high temperature oven. This technology exhibits component variability in  
dielectric quality (losses, dielectric constant and insulation resistance),  
variability in electrode conductivity and variability in physical size (affecting  
inductance). An alternate thin-film technology has been developed which  
virtually eliminates these variances. It is this technology which has been  
fully incorporated into Accu-P® and Accu-P® to provide high frequency  
capacitors exhibiting truly ideal characteristics.  
The main features of Accu-P® may be summarized as follows:  
High purity of electrodes for very low and repeatable ESR.  
Highly pure, low-K dielectric for high breakdown field, high insulation  
resistance and low losses to frequencies above 40GHz.  
Very tight dimensional control for uniform inductance, unit to unit.  
Very tight capacitance tolerances for high frequency signal  
applications.  
This accuracy sets apart these Thin-Film capacitors from ceramic capacitors  
so that the term Accu has been employed as the designation for this series  
of devices, an abbreviation for “accurate.”  
Orientation Marking  
Alumina (Al2O3)  
Electrode  
Seal  
(SiNO)  
Electrode  
Alumina (Al2O3)  
Terminations  
ACCU-P® CAPACITOR STRUCTURE  
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available  
online at www.kyocera-avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.  
26  
TDS-RFM-0041 | Rev 1  
rf microwave products  

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