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0805

更新时间： 2024-09-25 06:24:35

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		放大器功率放大器
页数	文件大小	规格书
16页	594K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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0805 数据手册

MW4IC001MR4

Rev. 3, 1/2005

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

The MW4IC001 wideband integrated circuit is designed for use as a distortion

signature device in analog predistortion systems. It uses Freescale’s newest

High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip

design makes it usable from 800 MHz to 2170 MHz. The linearity performances

cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and

W-CDMA.

MW4IC001NR4

MW4IC001MR4

800-2170 MHz, 900 mW, 28 V

W-CDMA

• Typical CW Performance at 2170 MHz, 28 Volts, I_DQ= 12 mA

Output Power — 900 mW PEP

Power Gain — 13 dB

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

Efficiency — 38%

• High Gain, High Efficiency and High Linearity

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• N Suffix Indicates Lead-Free Terminations

• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +65

- 0.5, +15

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

4.58

0.037

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

150

°C

stg

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case @ 85°C

27.3

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

0 (Minimum)

M1 (Minimum)

C2 (Minimum)

Machine Model

Charge Device Model

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MW4IC001NR4 MW4IC001MR4

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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