Datasheet > 0790_XP162A01B5PR

0790_XP162A01B5PR

更新时间： 2024-11-25 22:06:47

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	164K
描述
Power MOS FET

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数据手册

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0790_XP162A01B5PR 数据手册

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11S_46XP162A01B5PR 02.9.12 4:19 PM ページ 870

Power MOS FET

NP-Channel Power MOS FET

NDMOS Structure

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NLow On-State Resistance: 0.25Ω (max)

NUltra High-Speed Switching

NSOT-89 Package

■General Description

■Features

The XP162A01B5PR is a P-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Low on-state resistance: Rds(on)=0.25Ω(Vgs=-4.5V)

: Rds(on)=0.4Ω(Vgs=-2.5V)

Ultra high-speed switching

Operational Voltage

: -2.5V

The small SOT-89 package makes high density mounting possible.

High density mounting : SOT-89

■Pin Configuration

■Pin Assignment

NUMBER

NAME

FUNCTION

Gate

Drain

Source

Ｇ�

Ｄ�

Ｓ�

SOT-89�

（TOP VIEW）�

�

■Equivalent Circuit

■Absolute Maximum Ratings

Ta=25

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

-20

-2

Drain Current (Pulse)

Reverse Drain Current

Idp

-6

Idr

-2

P-Channel MOS FET�

(1 device built-in)

Continuous Channel

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55~150

Note: When implemented on a ceramic PCB

870

12 3 4

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