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03N70P PDF预览

03N70P

更新时间: 2024-09-22 21:54:11
品牌 Logo 应用领域
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页数 文件大小 规格书
6页 84K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

03N70P 数据手册

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AP03N70P  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Dynamic dv/dt Rating  
BVDSS 600/650/700V  
D
Repetitive Avalanche Rated  
Fast Switching  
RDS(ON)  
ID  
3.6Ω  
3.3A  
G
Simple Drive Requirement  
S
Description  
AP03N70 series are specially designed as main switching devices for  
universal 90~265VAC off-line AC/DC converter applications.TO-220 type  
provide high blocking voltage to overcome voltage surge and sag in the  
toughest power system with the best combination of fast  
G
D
TO-220  
S
switching,ruggedized design and cost-effectiveness.  
The TO-220 package is universally preferred for all commercial-industrial  
applications. The device is suited for switch mode power supplies ,DC-  
AC converters and high current high speed switching circuits.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
- /A/H  
600/650/700  
Gate-Source Voltage  
V
± 30  
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
3.3  
A
2.1  
13.2  
A
A
PD@TC=25℃  
Total Power Dissipation  
45  
W
Linear Derating Factor  
Single Pulse Avalanche Energy2  
0.36  
W/℃  
mJ  
A
EAS  
IAR  
85  
Avalanche Current  
3.3  
EAR  
TSTG  
TJ  
Repetitive Avalanche Energy  
Storage Temperature Range  
Operating Junction Temperature Range  
3.3  
mJ  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Value  
2.8  
Unit  
/W  
/W  
Rthj-c  
Max.  
Max.  
Rthj-a  
62  
Data & specifications subject to change without notice  
200303032  

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