Datasheet > BZT52H-C62-Q

BZT52H-C62-Q

更新时间： 2025-07-20 11:09:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	309K
描述
Voltage regulator diodesProduction

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BZT52H-C62-Q 数据手册

Nexperia

BZT52H-Q series

Voltage regulator diodes

Table 9. Characteristics per type; BZT52H-A27-Q to BZT52H-C51-Q

T_j= 25 °C unless otherwise specified.

BZT52H Sel Working

Maximum differential Reverse

Temperature Diode

Non-repetitive

-xxx

voltage

V_Z(V)

I_Z= 2 mA

resistance

r_dif(Ω)

current

I_R(μA)

coefficient

S_Z(mV/K)

I_Z= 2 mA

capacitance peak reverse

C_d(pF) [1]

current

I_ZSM(A) [2]

Min

Max I_Z= 1 mA I_Z= 5 mA Max

V_R(V) Min

Max

27-Q

30-Q

33-Q

36-Q

39-Q

43-Q

47-Q

51-Q

26.73 27.27 250

26.50 27.50

100

0.05

18.9

21.4

24.4

27.4

30.4

33.4

37.6

42.0

46.6

25.3

29.4

33.4

37.4

41.2

46.6

51.8

57.2

1.0

25.10 28.90

29.70 30.30 250

29.40 30.60

1.0

0.9

0.8

0.7

0.6

0.5

0.4

28.00 32.00

32.67 33.33 250

32.30 33.70

23.1

25.2

27.3

30.1

32.9

35.7

31.00 35.00

35.64 36.36 250

35.30 36.70

34.00 38.00

38.61 39.39 300

38.20 39.80

37.00 41.00

42.57 43.43 325

42.10 43.90

40.00 46.00

46.53 47.47 325

46.10 47.90

44.00 50.00

50.49 51.51 350

50.00 52.00

48.00 54.00

[1] f = 1 MHz; V_R= 0 V

[2] t_p= 100 μs; T_amb= 25 °C.

BZT52H-Q_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 4 October 2021

7 / 14

1...4 5 678 9 10...14

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