Datasheet > BZT52H-C62-Q

BZT52H-C62-Q

更新时间： 2025-07-20 11:09:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	309K
描述
Voltage regulator diodesProduction

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中文翻译

获取价格

数据手册

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BZT52H-C62-Q 数据手册

Nexperia

BZT52H-Q series

Voltage regulator diodes

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

I_F

Parameter

Conditions

Min

Max

Unit

forward current

250

I_ZSM

non-repetitive peak

reverse current

[1] -

see

Tables 8, 9

and 10

P_ZSM

P_tot

non-repetitive peak

reverse power dissipation

[1] -

total power dissipation

T_amb≤ 25 °C

[2] -

[3] -

375

°C

830

T_j

junction temperature

ambient temperature

storage temperature

150

T_amb

T_stg

-65

+150

°C

[1] t_p= 100 μs; square wave; T_j= 25 °C prior to surge.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

[1] -

Typ

Max

330

150

Unit

K/W

R_th(j-a)

thermal resistance from

junction to ambient

in free air

[2] -

[3] -

R_th(j-sp)

thermal resistance from

junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².

[3] Soldering point of cathode tab.

10. Characteristics

Table 7. Characteristics

T_j= 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

[1] -

Typ

Max

Unit

V_F

forward voltage

I_F= 10 mA

0.9

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

BZT52H-Q_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 4 October 2021

4 / 14

1 2 345 6 7...14

中文翻译

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